收藏本站
Si4355
5.2.1. Shutdown State
The shutdown state is the lowest current consumption state of the device and is entered by driving SDN (Pin 2)
high. In this state, all register contents are lost and there is no SPI access. To exit this mode, drive SDN low. The
device will then initiate a power on reset (POR) along with internal calibrations. Once this POR period is complete,
the POWER_UP command is required to initialize the radio and the configuration can then be loaded into the
device. The SDN pin must be held high for at least 10 μs before driving it low again to insure the POR can be
executed correctly. The shutdown state can be used to fully reset the part.
5.2.2. Standby State
The standby state has similar current consumption to the shutdown state but retains all register values, allowing for
a much faster response time. Because of these benefits, most applications will want to use standby mode rather
than shutdown. The standby state is entered by using the CHANGE_STATE API command. While in this state, the
SPI is accessible but any SPI event will automatically transition the chip to the SPI active state. After the SPI event,
the host will need to re-command the device to standby mode.
5.2.3. SPI Active State
The SPI active state enables the device to process any SPI events, such as API commands. In this state, the SPI
and boot up oscillator are enabled. The SPI active state is entered by using the CHANGE_STATE command or
automatically through an SPI event while in standby mode. If the SPI active state was entered automatically from
standby mode, a CHANGE_STATE command will be needed to return the device to standby mode.
5.2.4. Ready State
Ready state is designed to give a fast transition time to RX state with minimized current consumption. In this mode
the crystal oscillator remains enabled to minimize the transition time. Ready state can be entered using the
CHANGE_STATE command.
5.2.5. Power On Reset
A Power On Reset (POR) sequence is used to boot the device up from a fully off or shutdown state. To execute this
process, VDD must ramp within 1ms and must remain applied to the device for at least 10ms. If VDD is removed,
then it must stay below 0.15V for at least 10ms before being applied again. Please see Figure x and Table x for
details.
Figure 11. POR Timing Diagram
22
Rev 1.0
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI4388DY-T1-GE3 MOSFET DUAL N-CH 30V 8-SOIC
SI4390DY-T1-GE3 MOSFET N-CH 30V 8.5A 8SOIC
SI4396DY-T1-GE3 MOSFET N-CH D-S 30V 8-SOIC
SI4398DY-T1-GE3 MOSFET N-CH 20V 19A 8-SOIC
SI4404DY-T1-GE3 MOSFET N-CH D-S 30V 8-SOIC
SI4406DY-T1-GE3 MOSFET N-CH D-S 30V 8-SOIC
SI4410DY MOSFET N-CH 30V 10A 8-SOIC
SI4411DY-T1-GE3 MOSFET P-CH D-S 30V 8-SOIC
相关代理商/技术参数
Si4355-B1A-FMR 功能描述:射频接收器 Si4355 EZRadio Rcvr RoHS:否 制造商:Skyworks Solutions, Inc. 类型:GPS Receiver 封装 / 箱体:QFN-24 工作频率:4.092 MHz 工作电源电压:3.3 V 封装:Reel
SI4355-B1A-GM 制造商:Silicon Laboratories Inc 功能描述:SI4355 EZRADIO RECEIVER - Bulk
SI4356ADY 制造商:VAISH 制造商全称:VAISH 功能描述:N-Channel 30-V (D-S) MOSFET
Si4356ADY-T1-E3 功能描述:MOSFET 30V 26A 6.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4356ADY-T1-GE3 功能描述:MOSFET 30V 26A 6.5W 5.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4356-B1A-FM 制造商:Silicon Laboratories Inc 功能描述:SI4356 STANDALONE SUB-GHZ RECE 制造商:Silicon Laboratories Inc 功能描述:SI4356 STANDALONE SUB-GHZ RECEIVER - Rail/Tube 制造商:Silicon Laboratories Inc 功能描述:IC RX SUB-GHZ STAND ALONE QFN 制造商:Silicon Laboratories Inc 功能描述:RF Receiver Si4356 Standalone Sub-GHz Receiver
SI4356-B1A-FMR 制造商:Silicon Laboratories Inc 功能描述:SI4356 STANDALONE SUB-GHZ RECE 制造商:Silicon Laboratories Inc 功能描述:RECEIVER RF CI SMD - Tape and Reel 制造商:Silicon Laboratories Inc 功能描述:RF Receiver Si4356 Standalone Sub-GHz Receiver
SI4356DY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V MOSFET